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AOD450 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications). AOD450L is a Green Product ordering option. AOD450 and AOD450L are electrically identical.
TO-252 D-PAK
Features
VDS (V) = 200V ID = 3.8A RDS(ON) <0.7 (VGS = 10V)
193 18
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
Maximum 200 30 3.8 2.7 10 3 6 25 12.5 2.1 1.3 -55 to 175
Units V V A A mJ W W C
TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C
Repetitive avalanche energy L=1.35mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 17.1 50 4
Max 30 60 6
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD450
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=160V, VGS=0V TJ=55C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, VDS=15V VGS=10V, ID=3.8A TJ=125C VDS=15V, ID=3.8A 3 10 0.55 1.1 8.7 0.8 1 6 215 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 32 7.2 5.5 3.82 VGS=10V, VDS=25V, ID=3.8A 0.92 1.42 1.47 6.3 VGS=10V, VDS=25V, RL=6.5, RGEN=3 IF=3.8A, dI/dt=100A/s 3.3 10.5 2.8 59 142 0.70 1.32 5 Min 200 1 5 100 6 Typ Max Units V A nA V A S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance
IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Feb 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD450
TYPICAL ELECTRICAL CHARACTERISTICS
14 12 10 ID(A) ID(A) 8 6 4 2 0 0 5 10 VDS(Volts) 15 20 7V 1.0E-02 VGS=6V 1.0E-03 2 4 6 8 10 8V 1.0E+00 1.0E-01 125C 10V 1.0E+02 1.0E+01 VDS=15V
4.63 25C 494 692 593 830
Figure 1:On-Region Characteristics
VGS(Volts) Figure 2: Transfer Characteristics
800 Normalized On-Resistance 700 RDS(ON) (m) 600 500 400 300 200 0 1 2 3 4 5 6 7 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 VGS=10V, 3.8A
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Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
59 100 142
125
150
175
1400 1200 1000 800 600 400 200 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=3.8A 125C
1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=3.8A Capacitance (pF) 300 250 200 150 100 50 0 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss
4.63 494 692 593 830
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100.00 TJ(Max)=175C, TC=25C 10.00 ID (Amps) RDS(ON) limited 10s Power (W)
200 160 120 80 40 0 0.0001
TJ(max)=175C TC=25C
1.00
100 1ms
0.10
DC
0.01 0.1 1 10 VDS (Volts) 100 1000
0.001
0.01
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
59 0.1 142
1
10
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=6C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 ID(A), Peak Avalanche Current Power Dissipation (W) 4 3 2 1 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 30 25 20 15
4.63
10 5 0 0 25 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 50 175
494 692
593 830
5 4 Current rating ID(A) Power (W) 3 2 1 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
50 40 30 20 10 0 0.001
193 18
TA=25C
59
0.01 0.1 1 142 10 100 1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10 ZJA Normalized Transient Thermal Resistance
1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
0.01
Single Pulse
T
Alpha & Omega Semiconductor, Ltd.

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